Joseph, Mathai C; Anantharaman, M R; Venkitachalam, S; Jayalekshmi,S(Elsevier, September , 2002)
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Abstract:
Polyfurfural thin films lying in the thickness range of 1300–2000 A˚ were prepared by ac plasma polymerization technique.
The current–voltage characteristics in symmetric and asymmetric electrode configuration were studied with a view to determining
the dominant conduction mechanism.It was found that the Schottky conduction mechanism is dominant in plasma polymerized
furfural thin films.The predominance of Schottky mechanism was further confirmed based on the thermally stimulated current
measurements.
Anantharaman, M R; Saravanan, S; Venkatachalam, S; Avasthi, D K(Elsevier, March 26, 2007)
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Abstract:
Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92MeV Si ions for various fluences of 1 1011,
1 1012 and 1 1013 ions/cm2. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline
thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical
properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The
FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated
thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of CRC
terminals. This results in extended conjugated structure causing reduction in optical band gap