Tina,Sebastian; Dr.Sudha Kartha,C; Dr.Vijayakumar, K P(Cochin University of Science & Technology, August , 2009)
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Abstract:
Aim of the present work was to automate CSP process, to deposit and
characterize CuInS2/In2S3 layers using this system and to fabricate devices using
these films.An automated spray system for the deposition of compound
semiconductor thin films was designed and developed so as to eliminate the manual
labour involved in spraying and facilitate standardization of the method. The system
was designed such that parameters like spray rate, movement of spray head, duration
of spray, temperature of substrate, pressure of carrier gas and height of the spray head
from the substrate could be varied. Using this system, binary, ternary as well as
quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of
CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of
different preparation conditions and post deposition treatments on the optoelectronic,
morphological and structural properties were investigated. It was observed
that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in
understanding how the variation in spray parameters tailored the properties of the
absorber layer. These results were subsequently made use of in device fabrication
process.Effects of copper incorporation in
In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3
will affect the properties at the junction. It was noticed that there was a regular
variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and
In2S3 as buffer layer with silver as the top electrode. Stable devices could be
deposited over an area of 0.25 cm2, even though the efficiency obtained was not high.
Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus
automation helped in obtaining repeatable results over larger areas than those
obtained while using the manual unit. Silver diffusion on the cells before coating the
electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through
automated spray process has potential to achieve high efficiencies.
Description:
Department of Physics,
Cochin University of Science and Technology
Biju, Francis; Dr. M. L. P. Reddy(Cochin University of Science and Technology, January 6, 2016)
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Abstract:
The fascinating photoluminescence properties of trivalent europium (Eu3+)
coordination compounds have aroused tremendous interest in recent years due
to their potential applications ranging from biomedical analysis to material
science. The Eu3+ ions have excellent luminescent features such as long-lived
excited-state lifetimes (μs–ms range) and narrow, easily recognizable line-like
red emission bands with large Stokes shifts. A big challenge in the chemistry of
lanthanide ions is to develop luminescent europium complexes that can be
sensitized by visible-light. This field has become much more important because
of the demand for less-harmful labelling reagents in the life sciences and lowvoltage-
driven pure-red emitters in optoelectronic. Thus, the primary objective
of the present research work is to design and develop novel visible-light
sensitized Eu3+-β-diketonate complexes with impressive photophysical
propertiesThe thesis comprises of four chapters which are presented as independent
units and therefore the structure formulae, schemes, figures and references are
numbered chapterwise. The introductory chapter highlights a background
sketch of the use of β-diketonates as antenna ligands for Eu3+ ion, the recent
developments in visible light excitable Eu3+-β-complexes and an overview of
the various methods of synthesis of Eu3+-based silica hybrid materials, their
photophysical properties and possible applications